A mask film of a material on which substantially no nitride semiconductor grows and having a plurality of openings in a stripe shape is formed on a main surface of a base substrate. Then, on the base substrate, a semiconductor layer of nitride is selectively grown through the mask film. Then, a laser...http://www.google.de/patents/US6562701?utm_source=gb-gplus-sharePatent US6562701 - Method of manufacturing nitride semiconductor substrate
