A method of manufacturing a MOS transistor is provided. A substrate having a gate structure thereon is provided. A first spacer is formed on the sidewall of the gate structure. A pre-amorphization implantation is carried out to amorphize a portion of the substrate. A doped source/drain extension region...http://www.google.de/patents/US6943085?utm_source=gb-gplus-sharePatent US6943085 - Method of manufacturing metal-oxide-semiconductor transistor
