A plasma processing system is disclosed. The plasma processing system may include an electrostatic chuck (ESC) positioned inside a plasma processing chamber and configured to support a wafer. The ESC may include a positive terminal (+ESC) for providing a first force to the wafer and a negative terminal...http://www.google.de/patents/US7768766?utm_source=gb-gplus-sharePatent US7768766 - Plasma processing system ESC high voltage control
