A silicon oxynitride film is formed on entire surface of a semiconductor substrate, a lanthanum oxide film is formed on the silicon oxynitride film and the lanthanum oxide film is removed from a pMOS region. Then, a nitrided hafnium silicate film serving as a highly dielectric film is formed on the entire...http://www.google.de/patents/US20100133623?utm_source=gb-gplus-sharePatent US20100133623 - SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
