A laser-annealing method includes the steps of a first step of cleaning a non-monocrystal silicon film formed on a substrate, and a second step of laser-annealing the non-monocrystal silicon film in an atmosphere containing oxygen therein, wherein the first and second steps are conducted continuously...http://www.google.de/patents/US6348369?utm_source=gb-gplus-sharePatent US6348369 - Method for manufacturing semiconductor devices
