An improved LCMOS display device employing a silicon-on-insulator (SOI) substrate having an epitaxial silicon layer lying over an implant-generated dielectric layer. MOS device and capacitor elements used to activate the display are formed and interconnected in the epitaxial silicon. The implant-generated...http://www.google.de/patents/US4839707?utm_source=gb-gplus-sharePatent US4839707 - LCMOS displays fabricated with implant treated silicon wafers
