The present invention relates to a method for fabricating a nitride read only memory (NROM), comprising: forming a doped polysilicon layer over a substrate, defining the doped polysilicon layer by using a patterned mask layer to form a plurality of doped polysilicon lines and expose a portion of the...http://www.google.de/patents/US6607957?utm_source=gb-gplus-sharePatent US6607957 - Method for fabricating nitride read only memory
