A transistor device has a gate dielectric with at least two layers in which one is hafnium oxide and the other is a metal oxide different from hafnium oxide. Both the hafnium oxide and the metal oxide also have a high dielectric constant. The metal oxide provides an interface with the hafnium oxide that...http://www.google.de/patents/US6717226?utm_source=gb-gplus-sharePatent US6717226 - Transistor with layered high-K gate dielectric and method therefor
