To provide a technology capable of promoting property of a thin film transistor formed on a glass substrate, a silicon oxide film 102 is formed on a glass substrate 101 and an amorphous silicon film 103 is formed thereon. A nickel acetate solution including nickel element that is a metal element promoting...http://www.google.de/patents/US5986286?utm_source=gb-gplus-sharePatent US5986286 - Semiconductor device and a method of manufacturing the same
