An improved transistor structure that decreases source/drain (S/D) resistance without increasing gate-to-S/D capacitance, thereby increasing device operation. S/D structures are formed into recesses formed on a semiconductor wafer through a semiconductor layer and a first layer of a buried insulator...http://www.google.de/patents/US20030085424?utm_source=gb-gplus-sharePatent US20030085424 - Transistor structure with thick recessed source/drain structures and fabrication process of same
