This invention is related to a method for controlling a threshold voltage of a bottom gate type thin film transistor as follows. Gate electrodes and a gate insulating film are formed on a glass substrate. An amorphous silicon film is formed thereon and then crystallized into a crystalline silicon film....http://www.google.de/patents/US6197624?utm_source=gb-gplus-sharePatent US6197624 - Method of adjusting the threshold voltage in an SOI CMOS
