A method and apparatus for producing bulk single crystals of AlN having low dislocation densities of about 10,000 cm−2 or less includes a crystal growth enclosure with Al and N2 source material therein, capable of forming bulk crystals. The apparatus maintains the N2 partial pressure at greater than...http://www.google.de/patents/US8123859?utm_source=gb-gplus-sharePatent US8123859 - Method and apparatus for producing large, single-crystals of aluminum nitride
