A fabrication method of an ultra low-k dielectric layer is provided. A deposition process is performed, under the control of a temperature varying program or a pressure varying program, by reacting a dielectric matrix to form porous low-k dielectric layers with a gradient density on a barrier layer over...http://www.google.de/patents/US8092861?utm_source=gb-gplus-sharePatent US8092861 - Method of fabricating an ultra dielectric constant (K) dielectric layer
