In one embodiment, the present invention provides a method of fabricating a semiconducting device that includes providing a substrate including at least one semiconducting region and at least one oxygen source region; forming an oxygen barrier material atop portions of an upper surface of the at least...http://www.google.de/patents/US7955926?utm_source=gb-gplus-sharePatent US7955926 - Structure and method to control oxidation in high-k gate structures
