A method for forming an improved copper inlaid interconnect (FIG. 11) begins by performing an RF preclean operation (408) on the inlaid structure in a chamber (10). The RF preclean rounds corners (210a and 206a) of the structure to reduce voiding and improve step coverage while not significantly removing...http://www.google.de/patents/US6451181?utm_source=gb-gplus-sharePatent US6451181 - Method of forming a semiconductor device barrier layer
