Embodiments of a NOR flash memory and method for fabricating the same are provided. Bit lines can be formed as self-aligned source and drain regions between adjacent first polysilicon patterns. Contacts for the source and drain regions can be provided according to bit line instead of per cell. Word lines...http://www.google.de/patents/US8164955?utm_source=gb-gplus-sharePatent US8164955 - NOR flash memory device and method for fabricating the same
