A silicon oxynitride film is manufactured using SiH4, N2O and H2 by plasma CVD, and it is applied to the gate insulating film (1004 in FIG. 1A) of a TFT. The characteristics of the silicon oxynitride film are controlled chiefly by changing the flow rates of N2O and H2. A hydrogen concentration and a...http://www.google.de/patents/US7166899?utm_source=gb-gplus-sharePatent US7166899 - Semiconductor device, and method of fabricating the same
