A method of forming a tantalum nitride layer for integrated circuit fabrication is disclosed. In one embodiment, the method includes forming a tantalum nitride layer by chemisorbing a tantalum precursor and a nitrogen precursor on a substrate disposed in a process chamber. A nitrogen concentration of...http://www.google.de/patents/US7094680?utm_source=gb-gplus-sharePatent US7094680 - Formation of a tantalum-nitride layer
