Phosphorus is implanted into a crystalline semiconductor film by an ion dope method. However, a concentration of phosphorus required for gettering is 1×1020/cm3 or higher which hinders recrystallization by later anneal, and thus this becomes a problem. Also, when phosphorus is added at a high concentration,...http://www.google.de/patents/US7821005?utm_source=gb-gplus-sharePatent US7821005 - Method of manufacturing semiconductor device and semiconductor device
