A semiconductor device comprises a first semiconductor layer of a first conductivity type provided on a semiconductor substrate of the first conductivity type, a base layer of a second conductivity type provided in the first semiconductor layer, for defining a vertical MISFET including source regions...http://www.google.de/patents/US6707128?utm_source=gb-gplus-sharePatent US6707128 - Vertical MISFET transistor surrounded by a Schottky barrier diode with a common source and anode electrode
