A method and resulting structures are disclosed for fabricating a high efficiency high extraction light emitting diode suitable for packaging. The method includes the steps of adding a light emitting active portion of wide-bandgap semiconductor material to a conductive silicon carbide substrate, joining...http://www.google.de/patents/US7259402?utm_source=gb-gplus-sharePatent US7259402 - High efficiency group III nitride-silicon carbide light emitting diode
