Structures and methods involving dynamic, "enhancement mode," p-channel flash memories with an ultrathin tunnel oxide thickness, have been provided. Both the write and erase operations are performed by tunneling. According to the teachings of the present invention, the p-channel flash memory cell with...http://www.google.de/patents/US6384448?utm_source=gb-gplus-sharePatent US6384448 - P-channel dynamic flash memory cells with ultrathin tunnel oxides
