A method for forming a nonvolatile memory with optimum bias condition is disclosed. Initially, an ONO structure is formed on the substrate wherein the ONO structure has a first oxide layer, a nitride layer and a second oxide layer. Afterwards, a plurality of openings is formed on the ONO structure and...http://www.google.de/patents/US6348381?utm_source=gb-gplus-sharePatent US6348381 - Method for forming a nonvolatile memory with optimum bias condition
