Methods and apparatus are disclosed that allow an electronic system implemented with field effect transistors (FETs) to reduce threshold voltage shifts caused by bias temperature instability (BTI). BTI caused VT shifts accumulate when an FET is in a particular voltage stress condition. Many storage elements...http://www.google.de/patents/US7009905?utm_source=gb-gplus-sharePatent US7009905 - Method and apparatus to reduce bias temperature instability (BTI) effects
