One aspect of this disclosure relates to a method for creating a gettering site in a semiconductor wafer. In various embodiments, a predetermined arrangement of a plurality of holes is formed in the semiconductor wafer through a surface of the wafer. The wafer is annealed such that the wafer undergoes...http://www.google.de/patents/US7326597?utm_source=gb-gplus-sharePatent US7326597 - Gettering using voids formed by surface transformation
