A set of storage elements is programmed beginning with a word line WLn adjacent a select gate line for the set. After programming the first word line, the next word line WLn+1 adjacent to the first word line is skipped and the next word line WLn+2 adjacent to WLn+1 is programmed. WLn+1 is then programmed....http://www.google.de/patents/US7443726?utm_source=gb-gplus-sharePatent US7443726 - Systems for alternate row-based reading and writing for non-volatile memory
