First of all, a P-type semiconductor substrate is provided. Then an oxide-nitride-oxide layer is formed on the P-type semiconductor substrate. Afterward, a photoresister layer is formed on the oxide-nitride-oxide layer, and it is defined to form a plurality of photoresister regions on the oxide-nitride-oxide...http://www.google.de/patents/US20020182829?utm_source=gb-gplus-sharePatent US20020182829 - Method for forming nitride read only memory with indium pocket region
