The dual-bit flash memory cells of the present invention include three regions: the gate region, the first-side region, and the second-side region. The gate region is formed between the first-side region and the second-side region and is defined by a masking photoresist step and is scalable. The gate...http://www.google.de/patents/US6627927?utm_source=gb-gplus-sharePatent US6627927 - Dual-bit flash memory cells for forming high-density memory arrays
