The present invention comprises a light emitting diode formed in silicon carbide and that emits visible light having a wavelength of between about 475-480 nanometers, or between about 455-460 nanometers, or between about 424-428 nanometers. The diode comprises a substrate of alpha silicon carbide having...http://www.google.de/patents/US4918497?utm_source=gb-gplus-sharePatent US4918497 - Blue light emitting diode formed in silicon carbide
