Electronic apparatus and methods of forming the electronic apparatus include a hafnium lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The hafnium lanthanide oxynitride film may be structured as one or more monolayers. Metal electrodes may be disposed on a dielectric...http://www.google.de/patents/US7989362?utm_source=gb-gplus-sharePatent US7989362 - Hafnium lanthanide oxynitride films
