The object of this invention is to provide a high-output type nitride light emitting device. The nitride light emitting device comprises an n-type nitride semiconductor layer, a p-type nitride semiconductor layer and an active layer therebetween, wherein the light emitting device comprises a gallium-containing...http://www.google.de/patents/US7871843?utm_source=gb-gplus-sharePatent US7871843 - Method of preparing light emitting device
