A system and method for manufacturing semiconductor devices with dielectric layers having a dielectric constant greater than silicon dioxide includes depositing a dielectric layer on a substrate and subjecting the dielectric layer to a plasma to reduce top surface roughness in the dielectric layer....http://www.google.de/patents/US7115530?utm_source=gb-gplus-sharePatent US7115530 - Top surface roughness reduction of high-k dielectric materials using plasma based processes
