A planar interconnect using selective deposition of a refractory metal such as tungsten into oxide channels is disclosed. A layer of silicon dioxide as thick as the desired tungsten interconnect is placed on the surface of a substrate such as an integrated circuit wafer. Thereafter, a layer of silicon...http://www.google.de/patents/US4907066?utm_source=gb-gplus-sharePatent US4907066 - Planar tungsten interconnect with implanted silicon
