A high voltage up to 20V is usually applied to a NAND flash memory device for programming or easing a memory section. The programming/easing voltage must reach that high voltage state when the R/B signal is in the L state to start the actual cell programming or erasing. To improve the programming or...http://www.google.de/patents/US7466588?utm_source=gb-gplus-sharePatent US7466588 - Method for improving programming speed in memory devices
