A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each...http://www.google.de/patents/US6828195?utm_source=gb-gplus-sharePatent US6828195 - Method of manufacturing a trench transistor having a heavy body region
