A wet and vapor acid etching method releases a microelectromechanical systems (MEMS) structure from a substrate by dissolving a sacrificial layer disposed between the MEMS and the substrate. The sacrificial layer may be a silicon dioxide (SiO.sub.2) layer having a field portion over which the MEMS does...http://www.google.de/patents/US6238580?utm_source=gb-gplus-sharePatent US6238580 - Method of HF vapor release of microstructures
