Disclosed herein is a semiconductor device having an aluminum wiring formed on a semiconductor substrate and a silicon oxynitride film covering the aluminum wiring and having Si, N, O as main elements, atomic ratio of the three elements being expressed by Si.sub.x N.sub.y O.sub.z (where x+y+z=1.00),...http://www.google.de/patents/US4907064?utm_source=gb-gplus-sharePatent US4907064 - Semiconductor device having silicon oxynitride film with improved moisture resistance
