A method is provided for tuning (i.e. modifying, changing) the impedance of semiconductor components or devices using a focused heating source. The method may be exploited for finely tuning the impedance of semiconductor components or devices, by modifying the dopant profile of a region of low dopant...http://www.google.de/patents/US20040115907?utm_source=gb-gplus-sharePatent US20040115907 - Method for modifying the impedance of semiconductor devices using a focused heating source
