It is an object of the present invention to apply a technique for removing the adverse effect of a substrate shrinkage due to a heat treatment, and further forming a fine and high-quality insulating film, and a semiconductor device that can realize high-performance and high-reliability by using the same,...http://www.google.de/patents/US7608492?utm_source=gb-gplus-sharePatent US7608492 - Method for manufacturing semiconductor device and heat treatment method
