The invention provides a method of making a semiconductor structure that includes a surface layer of silicon, a buried insulating layer, and a substrate. The method includes implanting atoms through at least a portion of the insulating layer; and etching the insulating layer in at least a portion of...http://www.google.de/patents/US20040180519?utm_source=gb-gplus-sharePatent US20040180519 - Method of making cavities in a semiconductor wafer
