An object of the present invention is to provide a MOS transistor of a new structure and a method of manufacturing the same that is capable of easily fabricating a high integration density device by overcoming photolithography limitations. The object of the present invention is accomplished by a MOS...http://www.google.de/patents/US7145192?utm_source=gb-gplus-sharePatent US7145192 - MOS transistor and method of manufacturing the same
