In a non-volatile memory, the displacement current generated in non-selected word lines that results when the voltage levels on an array's bit lines are changed can result in disturbs. Techniques for reducing these currents are presented. In a first aspect, the number of cells being simultaneously programmed...http://www.google.de/patents/US6888752?utm_source=gb-gplus-sharePatent US6888752 - Method of reducing disturbs in non-volatile memory
