A thermal processing system (1) includes a reaction vessel (2) capable of forming a silicon nitride film on semiconductor wafers (10) through interaction between hexachlorodisilane and ammonia, and an exhaust pipe (16) connected to the reaction vessel (2). The reaction vessel 2 is heated at a temperature...http://www.google.de/patents/US6844273?utm_source=gb-gplus-sharePatent US6844273 - Precleaning method of precleaning a silicon nitride film forming system
