An amorphous semiconductor film is etched so that a width of a narrowest portion thereof is 100 m or less, thereby forming island semiconductor regions. By irradiating an intense light such as a laser into the island semiconductor regions, photo-annealing is performed to crystallize it. Then, of end...http://www.google.de/patents/US20010045563?utm_source=gb-gplus-sharePatent US20010045563 - Method for producing insulated gate thin film semiconductor device
