A diamond film FET according to the present invention comprises a semiconducting diamond layer, a gate, a source, and a drain, wherein said semiconducting diamond layer comprises a semiconducting highly-oriented diamond film grown by chemical vapor deposition, and at least 80% of the surface area of...http://www.google.de/patents/US5371383?utm_source=gb-gplus-sharePatent US5371383 - Highly oriented diamond film field-effect transistor
