Contacts for a nitride based transistor and methods of fabricating such contacts provide a recess through a regrowth process. The contacts are formed in the recess. The regrowth process includes fabricating a first cap layer comprising a Group III-nitride semiconductor material. A mask is fabricated...http://www.google.de/patents/US6982204?utm_source=gb-gplus-sharePatent US6982204 - Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
