A Spin-Dependent Tunnelling cell comprises a first barrier layer of a first material and a second barrier layer of a second material sandwiched between a first ferromagnetic layer and a second ferromagnetic layer. The first and second barrier layers are formed to a combined thicknesses so that a Tunnelling...http://www.google.de/patents/US7867788?utm_source=gb-gplus-sharePatent US7867788 - Spin-dependent tunnelling cell and method of formation thereof
