A thin-film semiconductor device having a vertical TFT which includes a gate insulating film formed on a sidewall of a throughhole formed in an insulating layer; a thin-film semiconductor layer formed on the gate insulating film; and a gate electrode formed within the insulating layer. The gate electrode,...http://www.google.de/patents/US5214296?utm_source=gb-gplus-sharePatent US5214296 - Thin-film semiconductor device and method of fabricating the same
