Integrated circuit structures comprising an embedded ferroelectric memory cell and methods of forming the same are described. These structures include a transistor level, a ferroelectric device level, a first metal level, an inter-level dielectric level and a second metal level. In a first embodiment,...http://www.google.de/patents/US20030030084?utm_source=gb-gplus-sharePatent US20030030084 - Fabricating an embedded ferroelectric memory cell
