A method is provided for producing a novel index-guided laser or laser array by MOCVD in a single growth step. A ridge or a number of ridges are first fabricated by dry or wet etching on a GaAs wafer; and n-and p-type epitaxial layers including cladding layers and an active layer are then grown on the...http://www.google.de/patents/US5311533?utm_source=gb-gplus-sharePatent US5311533 - Index-guided laser array with select current paths defined by migration-enhanced dopant incorporation and dopant diffusion
